CMOSpolysilicon

Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is ...

由 YB Gianchandani 著作 · 1998 · 被引用 15 次 — Abstract: A MEMS-first fabrication process for integrating CMOS circuits with polysilicon micromechanical structures is described in detail.

由 RM Krishna 著作 · 2022 · 被引用 8 次 — Our polysilicon-based heaters are the only solution that works with standard CMOS processes without the need for any additional steps. Unlike a metallic heater, ...

由 E Cobo 著作 · 2022 · 被引用 5 次 — Design of a CMOS image sensor pixel with embedded polysilicon nano-grating for near-infrared imaging enhancement. Appl Opt. 2022 Feb 1;61(4):960-968. doi: ...

The characteristics of polysilicon resistors in sub-0.25 μm CMOS ULSI applications have been studied. Based on the presented sub-0.25 μm CMOS borderless ...

The characteristics of polysilicon resistors in sub-0.25 μm CMOS ULSI applications have been studied. Based on the presented sub-0.25 μm CMOS borderless ...

深入研究「Doping of n+ and p+ polysilicon in a dual-gate CMOS process」主題。共同形成了獨特的指紋。

2011年5月20日 — Why is the polysilicon gate CMOS process known as a self-aligned process? Because the gate mask works also as a mask for n+/p+ diffusion ...

1 Poly-Si Gate Electrodes in CMOS Technology. Poly-Si gates have replaced metal gates in metal oxide semiconductor (MOS) transistor technology mainly due to ...